SUD45P03-15A vishay siliconix new product document number: 71123 s-00045erev. a, 24-jan-00 www.vishay.com faxback 408-970-5600 2-1 p-channel 30-v (d-s) mosfet v ds (v) r ds(on) ( ) i d (a) a 30 0.015 @ v gs = 10 v 15 30 0.024 @ v gs = 4.5 v 12 to-252 s gd top view drain connected to tab order number: SUD45P03-15A s g d p-channel mosfet
parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) b t a = 25 c i d 15 a continuous drain current (t j = 150 c) b t a = 100 c i d 10 a pulsed drain current i dm 100 a continuous source current (diode conduction) a i s 15 maximum power dissipation t c = 25 c p d 70 c w maximum power dissipation t a = 25 c p d 7 b w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol typical maximum unit junction - to - ambient b t 10 sec r thja 14 18 c/w j unc ti on- t o- a m bi en t b steady state r thja 40 50 c/w junction-to-case r thjc 1.5 1.8 notes a. surface mounted on 1o x 1o fr4 board. b. see soa curve for voltage derating.
SUD45P03-15A vishay siliconix new product www.vishay.com faxback 408-970-5600 2-2 document number: 71123 s-00045erev. a, 24-jan-00
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